Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

<div>The <i>(</i><svg height="9.49473pt" id="M43" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -9.28833 20.7688 9.49473" width="20.7688pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M545 106L524 126C493 85 467 65 455 65C438 65 427 113 405 238C448 295 498 362 543 439L533 448L478 435C453 386 423 331 398 295H395C370 404 347 448 282 448C169 448 23 309 23 153C23 54 65 -12 128 -12C203 -12 283 70 339 155H341C360 29 380 -12 411 -12C444 -12 491 11 545 106ZM333 204C265 95 210 54 169 54C137 54 113 96 113 171C113 302 191 405 252 405C301 405 318 306 333 204Z"></path></g><g transform="matrix(.013,0,0,-0.013,7.646,0)"><path d="M499 88L487 113C459 86 422 65 413 65C403 65 403 74 409 98L461 318C487 426 460 448 431 448C408 448 383 441 352 424C305 398 223 344 157 257H155L243 674C249 702 249 712 240 712C227 712 170 680 87 673L82 648H117C155 648 162 644 150 590L23 -4L30 -12C55 -4 81 3 105 8C113 53 131 150 143 187C199 281 323 387 372 387C390 387 393 369 380 311L328 86C313 19 319 -12 347 -12C379 -12 442 24 499 88Z"></path></g><g transform="matrix(.013,0,0,-0.013,14.354,0)"><path d="M457 332C457 400 429 448 397 448C384 448 371 441 365 435L366 428C376 413 388 372 388 315C388 152 306 45 220 45C166 45 134 85 158 180L197 332C204 361 207 385 207 402C207 434 196 448 174 448C125 448 66 406 23 342L43 319C84 368 110 383 121 383C130 383 129 374 122 343L76 156C71 137 69 120 69 105C69 25 125 -12 181 -12C314 -12 457 166 457 332Z"></path></g></svg><i>)<sup>2</sup></i> against photon energy (<span class="nowrap"><svg height="9.49473pt" id="M44" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -9.28833 13.0962 9.49473" width="13.0962pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M499 88L487 113C459 86 422 65 413 65C403 65 403 74 409 98L461 318C487 426 460 448 431 448C408 448 383 441 352 424C305 398 223 344 157 257H155L243 674C249 702 249 712 240 712C227 712 170 680 87 673L82 648H117C155 648 162 644 150 590L23 -4L30 -12C55 -4 81 3 105 8C113 53 131 150 143 187C199 281 323 387 372 387C390 387 393 369 380 311L328 86C313 19 319 -12 347 -12C379 -12 442 24 499 88Z"></path></g><g transform="matrix(.013,0,0,-0.013,6.708,0)"><path d="M457 332C457 400 429 448 397 448C384 448 371 441 365 435L366 428C376 413 388 372 388 315C388 152 306 45 220 45C166 45 134 85 158 180L197 332C204 361 207 385 207 402C207 434 196 448 174 448C125 448 66 406 23 342L43 319C84 368 110 383 121 383C130 383 129 374 122 343L76 156C71 137 69 120 69 105C69 25 125 -12 181 -12C314 -12 457 166 457 332Z"></path></g></svg>)</span> of the deposited ITiO films of different doping concentrations from Ti-0.5 wt% to Ti-5.0 wt%.</div>

International Journal of Photoenergy

fig7

Figure 7

Figure 7: Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 

Figure 7 | Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 