International Journal of Photoenergy / 2020 / Article / Tab 2

Research Article

Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

Table 2

Comparison the electrical properties of the ITiO obtained from study to those of the films deposited by other processes.

Deposited methods of ITiO filmsSubstrate temperature (°C)Resistivity (Ω cm)Mobility (cm2/V·s)Carrier concentration (cm-3)References

Without oxygen atmosphere30027.5[19]
RF magnetron sputtering (influence of RF power conditions)40045.5[20]
Pulsed DC magnetron sputtering45064[28]
Oxygen plasma treatment (PET substrate)130[29]
RF magnetron sputtering (influence of Ti doping concentration)3001.14 × 10-446.031.15 × 1021This study

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.