Research Article
Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device
Table 2
Comparison the electrical properties of the ITiO obtained from study to those of the films deposited by other processes.
| Deposited methods of ITiO films | Substrate temperature (°C) | Resistivity (Ω cm) | Mobility (cm2/V·s) | Carrier concentration (cm-3) | References |
| Without oxygen atmosphere | 300 | — | 27.5 | | [19] | RF magnetron sputtering (influence of RF power conditions) | 400 | | 45.5 | | [20] | Pulsed DC magnetron sputtering | 450 | | 64 | | [28] | Oxygen plasma treatment (PET substrate) | 130 | | — | — | [29] | RF magnetron sputtering (influence of Ti doping concentration) | 300 | 1.14 × 10-4 | 46.03 | 1.15 × 1021 | This study |
|
|