International Journal of Photoenergy / 2020 / Article / Tab 3

Research Article

Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

Table 3

Energy gap () of ITiO films at the temperature of 300°C.

Ti (wt%)0.51.01.52.02.53.03.54.04.55.0

(eV)2.732.792.852.973.183.223.293.353.423.57

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.