Research Article
The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment
Table 1
Parameter values used in the simulation of the SHJ devices under study.
| | Parameter | Value |
| | a-Si:H band gap, | 1.72 eV | | c-Si band gap, | 1.124 eV | | a-Si:H electron affinity, | 3.9 eV | | c-Si electron affinity, | 4.05 eV | | Doping concentration for a-Si:H(p+) sample SHJ1— | | | Doping concentration for a-Si:H(p+) sample SHJ2— | | | Minimum bulk dangling bond defect density | | | Peak dangling bond defect density at the a-Si:H(i)/c-Si interface | | | Richardson constant () for the thermionic emission barrier | 9.56 A K−2 cm−2 | | Conduction band offset between a-Si and c-Si () | 0.15 eV | | Valence band offset between a-Si and c-Si () | 0.446 eV |
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