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Photoanodes | Hole-transporting layer and interfaces | Device architecture | Improved stability |
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Improved morphology: precursor solution aging, film annealing, and incorporation of additives | Organic hole-transporting layer (such as carbon and spiro-MeOTAD) | Single-junction perovskite solar cells | Mixed-cation systems (e.g., Rb and Cs), or mixed-halide and mixed-cation systems, retain 92% of PCE after 1000 h |
Optimization of absorption layer crystallinity and film uniformity | Inorganic p-type semiconductor materials, e.g., CuI, NiO, CuSCN, and CuGaO2, up to 18.5% PCE | Perovskite/CIGS tandem cells: perovskite top cell fabricated on CIGS bottom cell Up to 24.2% PCE | Interfacial layers with UV-stable materials (SnO2, ammonium chloride) retain 94% of efficiency after 1000 h |
Lead-free PSCs: transition metals, alkaline-earth metals, rare-earth ions, and divalent metal cations (Ba2+, Ca2+, and Sr2+) | Interface engineering and optimization (e.g., incorporation of benzenethiol molecules for increased charge transport)—20% PCE | Perovskite/Si tandem cells: top perovskite cell and bottom Si cell Up to 29.5% PCE | Use of self-assembled monolayers as interfacial layers |
Double lead-free perovskites (Cs2AgSbI6, Cs2BiAuBr6, and Cs2BiCuI6) | Energy level modification by introducing an interfacial layer, such as poly(ethylene oxide) | Mechanically stacked and monolithic tandem device architectures | Encapsulation: glass film/epoxy resin, polymer sealants (polyethylene terephthalate), and |
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