Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Table 1

Basic physical models used in SILVACO ATLAS simulation.

Model	Syntax	Description
Mobility	CVT	To enable transverse field, doping, and temperature-dependent parts of mobility
Optical recombination	OPTR	To enable band-to-band recombination for direct band semiconductors
Shockley-Read-Hall	SRH	To enable recombination. It uses fixed minority carrier lifetimes
AUGER recombination	AUGER	To enable direct transition of three carriers. Important at high current densities
Fermi distribution	Fermi	To enable carrier statistics. Suitable for highly doped regions
Nonlocal band-to-band tunneling	BBT.NONLOCAL	To enable the spatial tunneling occurring through the top and bottom cells