Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Table 2

Main required parameters of the optimum selected materials used for designing the InGaP/GaAs DJ solar cell [33–35].

	In0.49Ga0.51P	GaAs	Al0.8Ga0.2As	(Al0.7Ga0.3)0.5In0.5P
Lattice constant (Å)	5.65	5.65	5.65	5.65
Energy band gap (eV)	1.9	1.42	2.09	2.4
Permittivity	11.62	13.2	11.7	11.7
Affinity (eV)	4.16	4.07	3.53	4.2
MUN (cm^2/Vs)	1945	8800	212.2	2150
MUP (cm^2/Vs)	141	400	67.6	141
NC300 (/cm^3)
NV300 (/cm^3)
TAUN (s)
TAUP (s)