Research Article

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Table 4

Summary of the extracted electrical performance parameters for the optimized InGaP/GaAs DJ solar cell using Al0.8Ga0.2As and (Al0.7Ga0.3)0.5In0.5P.

InGaP/GaAs DJ solar cell (V) (mA/cm2)FF (%) (%)

Top window layer Al0.8Ga0.2As2.3318.2386.4236.71
Top window layer (Al0.7Ga0.3)0.5In0.5P2.3319.8483.938.53