Research Article
Numerical Simulation of High Efficiency Environment Friendly CuBi2O4-Based Thin-Film Solar Cell Using SCAPS-1D
Table 1
Required parameters for the simulation of ITO/TiO2/CuBi2O4 (CB = conduction band; VB = valence band).
| | Parameters (unit) | ITO (ETL) [31] | TiO2 (buffer) [19] | CuBi2O4 (absorber) [14] |
| | Thickness (μm) | 0.23 | 0.05 | 2 | | Bandgap (eV) | 3.6 | 3.2 | 1.5 | | Electron affinity (eV) | 4.1 | 4.2 | 3.72 | | Dielectric permittivity (relative) | 10 | 10 | 34 | | CB effective DOS (cm−3) | | | | | VB effective DOS (cm−3) | | | | | Electron thermal velocity (cm/s) | | | | | Hole thermal velocity (cm/s) | | | | | Electron mobility (cm2/V-s) | | | | | Hole mobility (cm2/V-s) | | | | | Donor density (cm−3) | | | 0 | | Acceptor density (cm−3) | 0 | 0 | |
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