International Journal of Photoenergy

Recent Developments in Bismuth-Based Photocatalysis


Publishing date
01 Sep 2021
Status
Closed
Submission deadline
16 Apr 2021

Lead Editor

1Ocean University of China, Qingdao, China

2University of Ottawa, Ottawa, Canada

This issue is now closed for submissions.

Recent Developments in Bismuth-Based Photocatalysis

This issue is now closed for submissions.

Description

Bismuth-based semiconductors are a unique and promising group of recently developed advanced photocatalytic materials. They have been widely applied in several areas including the generation of H2 by splitting water, CO2/N2 reduction, decomposition of organic and inorganic pollutants in both wastewater and polluted air, and organic synthesis through harvesting the energy of light.

The electronic structure of bismuth-based semiconductors confers them with a suitable band gap for visible-light response and a well-dispersed valence band composed of hybrid orbitals of Bi 6s and O 2p, making them a promising candidate when compared to other metal oxide semiconductors. In addition, they are simple to operate and prepare with controlled morphologies, making them attractive as potential photocatalysts.

The aim of this Special Issue is to collate state-of-the-art studies and discussions in bismuth-based photocatalysis. Original research, as well as review articles, are welcomed.

Potential topics include but are not limited to the following:

  • Bismuth-based semiconductors applied in water splitting
  • Recent development of bismuth-based photocatalytic reduction of CO2
  • Potentials of bismuth-based photocatalysis in N2 reduction
  • Bismuth-based photocatalysis in water detoxification and disinfection
  • Effective approaches to improve bismuth-based photocatalytic activity
  • Newly developed applications on bismuth-based photocatalysis
  • Computational photocatalysis on bismuth-based photocatalysis
  • Integrated technologies with bismuth-based semiconductors involved
International Journal of Photoenergy
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Acceptance rate16%
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CiteScore4.800
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Impact Factor3.2
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