Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

<table>Synthesis of copolysilsesquioxane (PMSQ-CN) and their properties (a), and output characteristics of P3HT TFT with PMSQ gate-insulating layer (dashed lines) and PMSQ-CN gate-insulating layer (solid lines) at <svg height="15.45" id="M34" style="vertical-align:-3.43848pt" version="1.1" viewbox="0 0 21.975 15.45" width="21.975" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M713 296l-5 -25q-47 -7 -59 -20t-23 -72l-15 -79q-9 -48 -3 -74q-15 -3 -55 -13t-63 -15t-59.5 -10t-70.5 -5q-149 0 -243 80t-94 220q0 169 127.5 276.5t336.5 107.5q91 0 206 -36l-10 -165l-29 -1q1 85 -47.5 126t-146.5 41q-153 0 -243.5 -97t-90.5 -242
q0 -122 68.5 -198.5t188.5 -76.5q121 0 139 75l20 86q13 58 -1.5 70.5t-99.5 20.5l5 26h267z" id="x1D43A"></path></g>
</svg> = −10 and −30 V (b).</table>

International Journal of Polymer Science

fig13

Figure 13

Figure 13: Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors 