Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

Table 3

Device performance (mobility, on/off ratio, and 𝑉_th) of P3HT TFT on glass and PEN substrate with PMSQ as the gate insulating layers.

Substrate	m (cm^2 V^−1 s^−1)	𝑉th (V)	On/off ratio
Glass	4.0 × 10^−3	−18	4.0 × 10^3
PEN	1.3 × 10^−3	5	4.0 × 10^3