Review Article
Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
Table 4
Surface properties of co-PMSQ thin films.
| Additive [R-Si(OMe)3] | Contact angle | Surface free energy | R | mol% | (degree) | (mJ m−2) |
| None | — | 86.1 | 28.2 | –(CH2)17CH3 | 0.5 | 87.1 | 28.5 | –(CH2)2Ph | 0.5 | 89.6 | 27.1 | –(CH2)2(CF2)5CF3 | 0.5 | 92.9 | 24.3 | –(CH2)2(CF2)5CF3 | 1.0 | 97.1 | 22.3 |
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