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International Journal of Polymer Science
Volume 2014, Article ID 574684, 5 pages
Research Article

Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

Key Laboratory for Micro/Nano Technology and System of Liao-Ning Province, Dalian University of Technology, Dalian 116024, China

Received 28 August 2013; Accepted 9 January 2014; Published 27 February 2014

Academic Editor: Haojun Liang

Copyright © 2014 Cui Yan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3 (PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.