Research Article
Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier
Table 1
Comparison of analog performance parameters for
-type 10 nm FinFET device.
| Parameter | Ref. [29] | 10 nm FinFET | Proposed trigate underlap (HfO2) FinFET | Proposed trigate underlap (SiO2) FinFET |
| Transconductance (μS) | 352 | 262 | 390 | 315 | Output conductance e(S) | | | | | Intrinsic gain () | 1.09 | 1.07 | 1.4 | 1.02 | Parasitic gate capacitance (F) | | | | | Cut-off frequency (THz) | 0.05390 | 3.54 | 5.92 | 5.90 |
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