Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

Table 1

Comparison of analog performance parameters for -type 10 nm FinFET device.

Parameter	Ref. [29]	10 nm FinFET	Proposed trigate underlap (HfO2) FinFET	Proposed trigate underlap (SiO2) FinFET
Transconductance (μS)	352	262	390	315
Output conductance e(S)
Intrinsic gain ()	1.09	1.07	1.4	1.02
Parasitic gate capacitance (F)
Cut-off frequency (THz)	0.05390	3.54	5.92	5.90