Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

Table 2

Analog performance parameters towards -type 16 nm SOI FinFET structure.

Parameter	Bias condition	-FinFET
ON current ()	V	334 (μA/μm)
OFF current ()	V	3.19-6 (μA/μm)
Transconductance	V	408.2 μS
Threshold voltage	V	0.29 V
Subthreshold slope	V	77.6 mV/decade
Output resistance	V	Ω
Intrinsic gain	V	1.6
Parasitic gate capacitance	V	F