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International Journal of Reconfigurable Computing
Volume 2008, Article ID 723950, 9 pages
Research Article

On the Use of Magnetic RAMs in Field-Programmable Gate Arrays

1Le Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier (LIRMM), University of Montpellier II, UMR CNRS 5506, 161 rue ADA, 34392 Montpellier Cedex 5, France
2AREVA T&D/COGELEX, Branch Office, P.O. Box 87200, Riyadh 11642, Saudi Arabia

Received 31 March 2008; Accepted 29 August 2008

Academic Editor: Michael Hubner

Copyright © 2008 Y. Guillemenet et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM-based FPGAs. A real-time reconfigurable (RTR) micro-FPGA using FIMS-MRAM or TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.