Table of Contents
ISRN Condensed Matter Physics
Volume 2012 (2012), Article ID 184023, 6 pages
http://dx.doi.org/10.5402/2012/184023
Research Article

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

GaN Lab, Ostendo Technologies, Inc., 12214 Plum Orchard Drive, Silver Spring, MD 20783, USA

Received 18 June 2012; Accepted 31 July 2012

Academic Editors: A. Oyamada, M.-H. Phan, and H.-D. Yang

Copyright © 2012 Vladimir Ivantsov and Anna Volkova. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Vladimir Ivantsov and Anna Volkova, “A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching,” ISRN Condensed Matter Physics, vol. 2012, Article ID 184023, 6 pages, 2012. doi:10.5402/2012/184023