High-Gain Power-Efficient Front- and Back-End Designs for a 90 nm Transmit-Reference Receiver

Table 1

Relative merits of the 90 nm front-end amplifier.

References	Gain	Process	Freq.	Min. 𝑆11	Min. 𝑆22	Noise	Supply	IIP3	Power	Core area	FOM1
	(𝑆21, dB)	(nm, CMOS)	(GHz)	(dB)	(dB)	(NF, dB)	(V)	(dB𝑚)	(mW)	(mm^2)
This; work	20.5	90	22.7	−18	−24.8	3.5	1.2	−4	27.2	0.66	6.84
[20]	20	130	23.5	−12	−21.5	4.5	1.2	−5	24	0.36	5.59
[27]	23	180	16	−11	−18	6.5	1.5	—	28	1.32*	2.39
[28]	10	180	8	<−14	<−14	4.3	0.6	2	7	—	3.46
[29]	9.8	180	2.3	−20	−12	4	1.3	3	9	1.16	0.83
[30]	11	180	8.9	—	—	4.15	1	7	23.5	—	1.32
[31]	13	130	2.2	−28	—	4	1.3	7	2.62	0.58	3.64
[31]	15	130	2.2	−28	—	4.3	1.3	1	2.6	0.58	3.85
[32]	7	65	1	−17	—	2.6	1.2	1	14	0.009	0.31
[33]	17	180	1	−19	—	2.8	2.2	4	15.8	0.67	0.59
[34]	12	130	0.6	−12.5	−14	2.3	1.5	16	17.4	0.099	0.31
[35]	15	90	1.82	−20	—	3.85	1	14	4	0.294^/	2.39
[36]	26	90	2	−23	−18	2.75	1	2	9	0.046	3.30
[37]	18	130	2	−23	—	3	1.2	−10	25	1.5*	0.72
[38]	12.5	65	1	−16	−23.5	2.3	1	−3	13.7	0.02	0.70
[38]	14.5	65	1	−12.5	−15.5	2.8	1	−5	7	0.03	1.15

^/Including probe pads
*For entire front-end.