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ISRN Physical Chemistry
Volume 2013 (2013), Article ID 487485, 11 pages
Research Article

Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces

1Department of Characterisation of Nanoelectronic Structures, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
2Department of Photochemistry and Spectroscopy, Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
3Diagnostic Center, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauky 45, 03028 Kiev, Ukraine
4Laboratory of Growth and Physics of Low Dimensional Crystals, Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
5Department of Micro- and Nanotechnology of Wide Bandgap Semiconductors, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Received 28 October 2012; Accepted 3 December 2012

Academic Editors: J. G. Han and S. Yang

Copyright © 2013 Paweł Borowicz et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The structure of carbonic layer in three samples composed of 4H polytype of silicon carbide and the following sequence of layers: carbon/nickel/silicon/nickel/silicon was investigated with Raman spectroscopy. Different thermal treatment of the samples led to differences in the structure of carbonic layer. Raman measurements were performed with visible excitation focused on two interfaces: silicon carbide/carbon and carbon/silicide. The results showed differences in the structure across carbon film although its thickness corresponds to 8/10 graphene layers.