Modeling and Simulation of a Chemical Vapor Deposition

Table 1

The physical experiments with the real-life apparatus.

Test	𝑃𝑅 (mbar)	𝜗𝑆 (C)	𝑃plasma (W)	𝜙 (TMS) (SCCM)	𝜙(𝐻2) (SCCM)	Ratio (C : Si)	Mass (growth) (g)	Time (min)
080701-01-VA	9.7𝐸−2	400	900	10.23	0	0.97811	0.00012	120
080718-01-VA	1.1𝐸−1	400	900	10.00	0	1.00174	0.00050	130
080718-02-VA	4.5𝐸−2	400	900	10.00	0	1.24811	0.00070	110
080618-01-VA	4.3𝐸−2	400	500	10.23	0	1.32078	—	127
080716-01-VA	1.1𝐸−1	400	500	10.00	0	1.42544	0.00250	120
080715-02-VA	1.1𝐸−1	400	100	10.00	0	1.58872	0.00337	122
080804-01-VA	4.5𝐸−2	400	100	10.00	0	2.91545	0.00356	129
080630-01-VA	9.9𝐸−2	800	900	10.23	0	1.09116	0.00102	120
080807-01-VA	4.5𝐸−2	800	900	10.00	0	1.18078	0.00118	120
080625-01-VA	3.9𝐸−2	800	500	10.23	0	1.06373	—	120
080626-01-VA	9.3𝐸−2	800	500	10.23	0	1.12818	0.00174	130
080806-01-VA	4.8𝐸−2	800	100	10.00	0	1.73913	0.00219	121
080715-01-VA	1.1𝐸−1	800	100	10.00	0	1.62467	0.00234	120
081016-01-VA	1.0𝐸−1	600	300	10.00	0	1.72898	0.00321	123
081020-01-VA	1.1𝐸−1	600	300	10.00	50	1.49075	0.00249	114
081028-01-VA	1.1𝐸−1	600	300	10.00	15	1.53549	0.00273	120
081023-01-VA	1.1𝐸−1	600	300	10.00	10	1.54278	0.00312	127
081027-01-VA	1.1𝐸−1	600	300	10.00	5.5	1.55818	0.00277	126
081024-01-VA	1.1𝐸−1	600	300	10.00	3.5	1.64367	0.00299	120
081022-01-VA	1.0𝐸−1	600	300	10.00	2.5	1.69589	0.00318	127