Quantitative Analysis and Band Gap Determination for CIGS Absorber Layers Using Surface Techniques

Table 1

Configurations and conditions of the deposition processes for the CIGS samples.

Sample number		B01	B02	B03	B04
Configuration	n-TCO	i-ZnO/ZnO : Al	i-ZnO/ZnO : Al	i-ZnO/ZnO : Al	i-ZnO/ZnO : Al
	n-buffer	CdS	CdS	CdS	CdS
	p-absorber (μm)	CIGS (1.70)	CIGS (1.98)	CIGS (2.24)	CIGS (2.21)
	Back contact	Mo	Mo	Mo	Mo/Mo : Na/SiOx
Condition of CIGS deposition (Å/s) (°C)		Normal Se flux (∼22) (570)	Low Se flux, (∼5) (570)	Normal Se flux (∼22) (540)	Normal Se flux (∼22) (570)
Cell efficiency (%)		14.6	14.3	11.7	10.3
SEM cross-section image