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Journal of Chemistry
Volume 2014 (2014), Article ID 784824, 8 pages
Research Article

Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films

Department of Applied Chemistry, Kumoh National Institute of Technology, Yangho-dong 1, Gumi-si, Gyeongbuk-do 730-701, Republic of Korea

Received 27 March 2014; Revised 3 July 2014; Accepted 17 July 2014; Published 13 August 2014

Academic Editor: Mallikarjuna N. Nadagouda

Copyright © 2014 Ngoc Duy Pham et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Herein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaAs (100) substrates, a simple and cost-effective method to fabricate highly controlled metal/semiconductor interface. A time-resolved surface analysis of Au/GaAs system was conducted and microscopic mechanism of galvanic displacement was elucidated in detail. Quantitative temporal XPS measurements of the Au/GaAs interface showed that, initially, fast Au growth was slowed down as the deposition process proceeded. This was attributed to growing oxide layer blocking hole conduction and causing quenching of the deposition process. Addition of various inorganic acids, which function as oxide etchants, was found to enhance deposition rates by effectively removing surface oxide, with HF the most effective. Various precious metals, such as Pt and Ag, could be deposited onto GaAs through galvanic displacement, which demonstrates the versatility of the method.