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Journal of Chemistry
Volume 2016, Article ID 1247175, 8 pages
Research Article

Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices

1Institute of Chemistry, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
2Faculty of Electrical-Electronic Engineering, University of Transport and Communications, No. 3 Cau Giay Street, Dong Da, Hanoi, Vietnam
3Institute for Tropical Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
4Faculty of Engineering Physics and Nano-Technology, University of Engineering and Technology, Vietnam National University, 144 Xuan Thuy, Cau Giay, Hanoi, Vietnam

Received 28 October 2015; Revised 4 December 2015; Accepted 24 December 2015

Academic Editor: Ahmed Mourran

Copyright © 2016 Mai Ha Hoang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Recently, the fabrication of nonvolatile memory devices based on gold nanoparticles has been intensively investigated. In this work, we report on the design and synthesis of new semiconducting quaterthiophene incorporating hexyl thiol group (4TT). Gold nanoparticles capped with 4TT (4TTG) were prepared in a two-phase liquid-liquid system. These nanoparticles have diameters in the range 2–6 nm and are well dispersed in the poly(3-hexylthiophene) (P3HT) host matrix. The intermolecular interaction between 4TT and P3HT could enhance the charge-transport between gold nanoparticles and P3HT. Transfer curve of transistor memory device made of 4TTG/P3HT hybrid film exhibited significant current hysteresis, probably arising from the energy level barrier at 4TTG/P3HT interface. Additionally, the polymer memory resistor structure with an active layer consisting of 4TTG and P3HT displayed a remarkable electrical bistable behavior.