Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices

Figure 4

(a) TFT device structure using 4TTG/P3HT as active layer and (b) transfer characteristics of the Au/P3HT/Au (programed (curve (1)) and erased (curve (2)) states) and Au/4TTG + P3HT/Au (programed (curve (3)) and erased (curve (4)) states) devices.

(a)

(b)