Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices

Figure 5

(a) Device structure and (b) current-voltage (-) characteristics of the Al/4TTG + P3HT/Al and Al/P3HT/Al resistor memory devices. Curves (1), (2), and (3) represent the first, second, and third bias scans of the Al/4TTG + P3HT/Al device. Curve (4) is the - curve of the Al/P3HT/Al device.

(a)

(b)