The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe

<div>Bandgap energies of (a) ZnO<sub>0.25</sub>Te<sub>0.75</sub>, (b) ZnO<sub>0.50</sub>Te<sub>0.50</sub>, and (c) ZnO<sub>0.75</sub>Te<sub>0.25</sub>.</div>

Journal of Chemistry

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Figure 2

Figure 2: The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe 