Research Article

Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method

Figure 2

Structural characteristics of GaN:Mn nanowires grown on Si substrates at different temperatures: (a) 1000°C, (b) 1050°C, (c) 1100°C, (d) 1200°C, (e) 1300°C and (f) 1400°C.
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216259.fig.002b
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216259.fig.002d
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