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Journal of Engineering
Volume 2014, Article ID 715167, 8 pages
Research Article

The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature

1Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Malaysia
2Queensland Micro- and Nanotechnology Centre (QMNC), Griffith University, Brisbane, QLD 4111, Australia

Received 18 December 2013; Accepted 29 April 2014; Published 22 May 2014

Academic Editor: Sheng-Rui Jian

Copyright © 2014 N. Marsi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Q. Zhao and X. Xiong, “MEMS pressure sensor for high-temperature application,” in Proceedings of the American Society for Engineering Education Northeast Section Conference (ASEE '10), Boston, Mass, USA, 2010.
  2. R. G. Azevedo, J. Zhang, D. G. Jones et al., “Silicon carbide coated mems strain sensor for harsh environment applications,” in Proceedings of the 20th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '07), pp. 643–646, January 2007. View at Scopus
  3. M. Mehregany, C. A. Zorman, N. Rajan, and C. H. Wu, “Silicon carbide MEMS for harsh environments,” Proceedings of the IEEE, vol. 86, no. 8, pp. 1594–1609, 1998. View at Publisher · View at Google Scholar · View at Scopus
  4. M. B. J. Wijesundara and R. G. Azevedo, Silicon Carbide Microsystems for Harsh Environments, vol. 22 of MEMS Reference Shelf, Springer, 2011.
  5. N. Marsi, B. Y. Majlis, A. A. Hamzah, and F. Mohd-Yasin, “Comparison of mechanical deflection and maximum stress of 3C-SiC and Si-based pressure sensor diaphragms for extreme environment,” in Proceedings of the Semiconductor Electronics (ICSE '12), pp. 186–190, 2012.
  6. J. Du, D. J. Young, C. A. Zorman, and W. H. Ko, “Single crystal SiC capacitive pressure sensor at 400°C,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM '03), pp. 783–786, December 2003. View at Scopus
  7. R. Khakpour, S. R. M. Mansouri, and A. R. Bahadorimehr, “Analytical comparison for square, rectangular and circular diaphragms in MEMS applications,” in Proceedings of the International Conference on Electronic Devices, Systems and Applications (ICEDSA '10), pp. 297–299, April 2010. View at Publisher · View at Google Scholar · View at Scopus
  8. M. Damghanian, Design and Fabrication of a MEMS Tactile Pressure Sensor Array for Fingerprint Imaging, Universiti Kebangsaan Malaysia, Bangi, Malaysia, 2009.
  9. P. M. Kurowski, Engineering Analysis With Solidworks Simulation, Schroff Development Corporation, 2012.
  10. H. Tai-Ran, MEMS and Microsystems: Design, Manufacture and Nanoscale Engineering, John Wiley & Sons, New York, NY, USA, 2008.
  11. A. C. Zonnevylle, T. Verduin, C. W. Hagen, and P. Kruit, “Deflection properties of an electrostatic electron lens with a shifted electrode,” Journal of Vacuum Science and Technology B, vol. 31, no. 6, pp. 06F702–06F702-7, 2013. View at Publisher · View at Google Scholar
  12. H. Xiao, Dynamic defocusing in streak tubes [thesis of laboratory for laser energetic], University of Rochester, 2012.
  13. Z. Zhang, L. Li, X. Xie, D. Xiao, and W. He, “Optimization design and research character of the passive electric field sensor,” IEEE Sensors Journal, vol. 14, no. 2, pp. 508–513, 2014. View at Publisher · View at Google Scholar
  14. M. V. Kuzelev, G. P. Mkheidze, A. A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets, Electron Beam Generated Plasmas: Theory, Experiments, Applications, vol. 67 of Advanced Technologies Based on Wave and Beam Generated Plasmas NATO ASI Series, 1999.
  15. H.-Y. Ma, Q.-A. Huang, M. Qin, and T. Lu, “A micromachined silicon capacitive temperature sensor for radiosonde applications,” in Proceedings of the IEEE Sensors Conference (SENSORS '09), pp. 1693–1696, October 2009. View at Publisher · View at Google Scholar · View at Scopus
  16. A. E. Medler, A thin monocrystalline diaphragm pressure sensor using silicon-on-insulator technology [thesis degree of doctor of philosophy, School of Engineering Systems], Middlesex University, 1998.
  17. N. Marsi, B. Y. Majlis, F. Mohd-Yasin, and A. A. Hamzah, “The capacitance and temperature effects of the SiC- and Si- based mems pressure sensor,” Journal of Physics: Conference Series, vol. 431, pp. 1–9, 2013. View at Google Scholar
  18. J. Gomes and H. R. Shea, “Displacement damage effects in silicon MEMS at high proton doses,” in Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices X, vol. 7928 of Proceedings of SPIE, January 2011. View at Publisher · View at Google Scholar · View at Scopus
  19. A. Benmeddour, S. Meziani, and Numerical study of thermal stress during different stages of silicon Czochralski crystal growth, Revue des Energies Renouvelables, vol. 12, pp. 575–584, 2009.
  20. M. Zang, D. L. Polla, S. M. Zurn, and T. Cui, “Stress and deformation of pzt thin film on silicon wafer due to thermal expansion,” in Symposia BB—Multicomponent Oxide Films for Electronics, vol. 574 of MRS Proceedings, 1999. View at Publisher · View at Google Scholar
  21. Y. Hezarjaribi, M. N. Hamidon, S. H. Keshmiri, and A. R. Bahadorimehr, “Capacitive pressure sensors based on MEMS, operating in harsh environments,” in Proceedings of the IEEE International Conference on Semiconductor Electronics (ICSE '08), pp. 184–187, November 2008. View at Publisher · View at Google Scholar · View at Scopus