Photoluminescence Enhancement Effect of the Layered MoS₂ Film Grown by CVD

Figure 5

(a) Raman and (b) PL spectra of layered MoS₂ film synthesized at different annealing temperatures. The annealing temperature changed from 780°C to 840°C with 20°C temperature spaces, respectively. The MoS₂ film synthesized without annealing is also shown as a comparison. All measurements were carried out at the same experiment conditions.

(a)

(b)