Research Article
Design Consideration for High Step-Up Nonisolated Multicellular dc-dc Converter for PV Micro Converters
Table 3
Parameters for switching energy calculation.
| Circuit parasitic parameters |
| Total parasitic inductance | 22.5 nH | Parasitic capacitances , | 10 pF, 30 pF | Common inductance | 1 nH | Gate inductance | 3 nH | Gate resistance | 3 Ω |
| GaN-HEMT , for free-wheeling diode |
| On-resistance | 150 mΩ | Output capacitance | 110 pF @ 100 V | Breakdown voltage | 600 V |
| GaN-FET |
| On-resistance | 50 mΩ | Output capacitance | 110 pF @ 100 V | Breakdown voltage | 200 V |
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