Optimization of an On-Grid Inverter for PV Applications Using Genetic Algorithms

Table 2

Power transistor database.

Transistor	Description	Nonlinear averaged model parameters										Cost (€)
		(Ω)	(V)	(Ω)	(V)	Vth (V)	Vgsp (V)	Ciss (pF)	Crss (pF)	(S)	(A/μs)
SiHA22N60AE	MOSFET (12 A; 600 V)	0.66	0	9.1	10	3	7.42	1451	13.9	4.8	333.3	1.55
FCPF165N65S3L1	MOSFET (12.3 A; 600 V)	0.51	0	4.7	10	3.5	5.45	1415	9.5	12	452.4	4.41
FCB20N60F	MOSFET (12.5 A; 600 V)	0.76	0	25	10	4	6.32	2370	33.3	17	142.9	4.62
FMV20N60S1	MOSFET (12.6 A; 600 V)	0.11	0	27	10	3	5.25	1470	2.4	17.5	250.0	6.16
FCP190N60	MOSFET (12.7 A; 600 V)	0.63	0	4.7	10	3	4.3	2220	8.4	21	1000.0	2.93
IRG7SC12FPbF	IGBT (13 A; 600 V)	0.04	1.42	47	15	6	9.23	880	7.2	6.2	400.0	1.34
IRFP460BPbF	MOSFET (13 A; 500 V)	0.72	0	4.3	10	3	5.45	4200	10	13	339.0	2.02
SiHP22N60E	MOSFET (13 A; 600 V)	0.50	0	4.7	10	3	6.2	1920	13.7	6.4	407.4	1.59
SPW20N60S5	MOSFET (13 A; 600 V)	0.12	0	3.6	10	4.5	8	3000	7	12	800.0	4.15
FCH190N65F	MOSFET (13.1 A; 650 V)	0.69	0	4.7	10	4	5.59	2425	9.5	18	909.1	4.03
STGB14NC60K	IGBT (14 A; 600 V)	0.10	1.39	10	15	5.5	9.84	760	26.5	3	823.5	1.43
STGD7NC60HT4	IGBT (14 A; 600 V)	0.05	1.53	10	15	4.75	8.44	720	20.8	4.3	823.5	1.63
FCPF150N65F	MOSFET (14.9 A; 650 V)	0.69	0	4.7	10	4	5.7	2810	9.5	22	800.0	5.05
SiHP24N65EF	MOSFET (15 A; 650 V)	0.70	0	9.1	10	3	5.67	2656	13.3	7.2	352.9	2.50
IRGS15B60KPbF	IGBT (15 A; 600 V)	0.03	1.11	22	15	4.5	7.33	850	19	10.6	937.5	2.19
NGTG15N60S1EG	IGBT (15 A; 600 V)	0.02	1.11	22	15	5.5	9.375	1950	22.7	10.1	535.7	1.56
SGP15N60	IGBT (15 A; 600 V)	0.05	1.3	21	15	4	6.96	800	44.1	10.9	652.2	1.48
IXYP15N65C3	IGBT (15 A; 650 V)	0.05	1.07	20	15	4.75	9.4	583	13.3	8.5	750.0	2.13