Research Article
Ultra-Low Leakage Arithmetic Circuits Using Symmetric and Asymmetric FinFETs
Table 1
Device parameters for FinFET.
| Parameter | Value |
| Length of the channel () | 25 nm | Thickness of front/back gate oxide (/) | 1 nm | Thickness of the fin () | 14 nm | Height of the fin () | 25 nm | Work function (/) (/) | 4.6 eV | Power supply () | 1.2 V | Channel doping (NBODY) | 1E15 cm−3 |
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