Ultra-Low Leakage Arithmetic Circuits Using Symmetric and Asymmetric FinFETs

Table 1

Device parameters for FinFET.

Parameter	Value
Length of the channel (𝐿)	25 nm
Thickness of front/back gate oxide (𝑡oxfg/𝑡oxbg)	1 nm
Thickness of the fin (𝑡Si)	14 nm
Height of the fin (ℎfin)	25 nm
Work function (N/P) (𝜑N/𝜑P)	4.6 eV
Power supply (𝑉DD)	1.2 V
Channel doping (NBODY)	1E15 cm^−3