Ultra-Low Leakage Arithmetic Circuits Using Symmetric and Asymmetric FinFETs

Table 4

Impact of asymmetric work functions on leakage current for N FinFET.

Back gate work function (eV)	VBG = 0 V	VBG = −0.2 V
Front gate work function = 4.6 eV	𝐼OFF (pA)	𝐼OFF (pA)
Symmetric (∅N) = 4.6	33.10	1.79
Asymmetric (∅N) = 4.7	7.22	0.42
Asymmetric (∅N) = 4.8	2.03	0.12