High-Speed Transmission and Mass Data Storage Solutions for Large-Area and Arbitrarily Structured Fabrication through Maskless Lithography

Table 2

Comparison of direct-write method features.

Project	Resolution	Diameter of substrate	Writing speed
Laser beam DW
LGDW^1	2 μm	Ф < 100 mm	10^−4 mm^2/s
FGDW^2	25 μm	Ф < 100 mm	0.25 mm^2/s
LIFT^3	10–200 μm	Ф < 100 mm	3–50 mm/s up to 500 mm/s
Electron beam DW
PML2	12.5 nm	Ф = 300 mm	300 mm wafer per hour
FLX-1200	28 nm	26 × 33 mm^2	37 hours
Our system	200 nm	Ф = 120 mm	1.7 m/s (24 mm^2/s)

Laser-guided direct-write (LGDW).
²Flow-guided direct-write (FGDW).
³Laser induced forward transfer (LIFT).