Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Table 1

Design parameters used in the proposed switch design.

S. number	Design parameter	Value	Unit
1	CPW (G–S–G)	55–90–55	µm
2	Anchor dimension		µm^2
3	Oxide thickness	0.1	µm
4	Oxide dielectric constant	3.9
5	Floating metal thickness	0.1	µm
6	Floating metal area		µm^2
7	Bridge thickness	4	µm
8	Bridge length	300	µm
9	Bridge width	100	µm
10	Bridge height above float metal	2	µm
11	Clamp thickness	4	µm
12	Support thickness	3	µm
13	Support dimensions		µm^2
14	Signal line gap	20	µm
15	Actuating electrode area		µm^2
16	Chip size		µm^2