Research Article
Low Actuating Voltage Spring-Free RF MEMS SPDT Switch
Table 1
Design parameters used in the proposed switch design.
| S. number | Design parameter | Value | Unit |
| 1 | CPW (G–S–G) | 55–90–55 | µm | 2 | Anchor dimension | | µm2 | 3 | Oxide thickness | 0.1 | µm | 4 | Oxide dielectric constant | 3.9 | | 5 | Floating metal thickness | 0.1 | µm | 6 | Floating metal area | | µm2 | 7 | Bridge thickness | 4 | µm | 8 | Bridge length | 300 | µm | 9 | Bridge width | 100 | µm | 10 | Bridge height above float metal | 2 | µm | 11 | Clamp thickness | 4 | µm | 12 | Support thickness | 3 | µm | 13 | Support dimensions | | µm2 | 14 | Signal line gap | 20 | µm | 15 | Actuating electrode area | | µm2 | 16 | Chip size | | µm2 |
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