Review Article
Technology and Modeling of Nonclassical Transistor Devices
Table 1
Classical device scaling.
| Device/circuit parameter | Scaling factor constant electric field scaling | Scaling factor generalized scaling (Ε > 1) |
| Linear dimensions (L, W, tox) | 1/κ | 1/κ | Electric field intensity | 1 | ε | Supply voltage (V, VDD) | 1/κ | ε/κ | Current (I) | 1/κ | ε/κ | Capacitance (C) | 1/κ | 1/κ | Inversion charge density (QI) | 1 | ε | Speed (∼/C) | κ | κ | Chip area (A) | 1/κ2 | 1/κ2 | Power dissipation (P = VI) | 1/κ2 | ε2/κ2 | Power density (∼P/A) | 1 | ε2 | Doping concentration (NA, ND) | κ | εκ |
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