Research Article
SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Table 1
IGBT electrical parameters (IRGBC20U).
| | | Parameters | Values |
| | Static parameters | VCE0 | 1.9 V | | RONDE | 8.66 10−2 Ω | | RDN | 2.3073 10−3 Ω | | RONDC | 2.479 10−1 Ω | | ROFFDC | 108 Ω | | RONDP | 3.42 10−3 Ω | | ROFFDP | 2.373 107 Ω | | GP | 1.154 Ω−1 | | VTH | 5.3 V | | KP | 1.766 | | Θ | 8.47 10−2 | | RGE | 2 108 | | Β | 10−1 |
| | Dynamic parameters | CGE | 3 10–10 F | | CGCmin, RGC, LGC,RONGCVCET | 6 10−12 F, 10−1 Ω, 10−10 H, 103 Ω, 20V | | GGC | 2.44 10−3F | | CCE, GCE | 5.9 10−13 F, 3.06 103 Ω−1 | | Gt | 910 Ω−1 |
|
|
