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Journal of Energy
Volume 2014, Article ID 946406, 7 pages
Research Article

Analysis of Si/SiGe Heterostructure Solar Cell

School of Electronics and Communication, Shri Mata Vaishno Devi University, Katra, Jammu 182320, India

Received 29 May 2014; Accepted 9 July 2014; Published 23 July 2014

Academic Editor: Ahmet Z. Sahin

Copyright © 2014 Ashish Kumar Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005), is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of heterostructure solar cell. The research has investigated characteristics such as short circuit current density ( ), generation rate ( ), absorption coefficient (α), and open circuit voltage ( ) with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.