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Journal of Nanomaterials
Volume 2006 (2006), Article ID 58237, 6 pages

Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD)

1Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, OH 45221-0012, USA
2Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA

Received 9 March 2006; Revised 13 July 2006; Accepted 31 July 2006

Academic Editor: E. G. Wang

Copyright © 2006 L. Guo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


B-rich nanowires are grown on Ni coated oxidized Si(111) substrate using diborane as the gas precursor in a CVD process at 20 torr and 900C. These nanowires have diameters around 20–100 nanometers and lengths up to microns. Icosahedron B12 is shown to be the basic building unit forming the amorphous B-rich nanowires as characterized by EDAX, XRD, XPS, and Raman spectroscopies. The gas chemistry at low [B2H6]/ [N2] ratio is monitored by the in situ mass spectroscopy, which identified N2 as an inert carrier gas leading to formation of the B-rich compounds. A nucleation controlled growth mechanism is proposed to explain the rugged nanowire growth of boron. The role of the Ni catalyst in the synthesis of the B-rich nanostructures is also discussed.