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Journal of Nanomaterials
Volume 2007 (2007), Article ID 43491, 5 pages
Review Article

Photoluminescence of Silicon Nanocrystals in Silicon Oxide

1Laboratorio di Nanoscienze, Dipartimento di Fisica, Università di Trento, Via Sommarive 14, Povo 38100, Italy
2Fondazione Bruno Kessler, Via Sommarive 18, Povo 38100 , Italy
3State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received 15 May 2007; Accepted 17 November 2007

Academic Editor: Tran Kim Anh

Copyright © 2007 L. Ferraioli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.