Buckling of Single-Crystal Silicon Nanolines under Indentation
Figure 1
SEM images of parallel silicon nanolines, with 74 nm line
width and 510 nm height; the pitch distance is 180 nm. (a) A plan view, (b) a
perspective view with tilt angle. A trench pattern is specially designed at one end of the line for
the SEM image in (b), showing the cross sections of the nanolines with sharp
edges due to anisotropic etching.
