Field Effect on Crystal Phase of Silicon in Si/<svg style="vertical-align:-4.32007pt;width:49.787498px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 49.787498 20.4125" width="49.787498" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,-0,0,-.022,.062,14.975)"><path id="x43" d="M614 175l29 -10q-33 -109 -57 -154q-121 -26 -184 -26q-90 0 -160.5 29t-112.5 77t-63.5 105.5t-21.5 119.5q0 157 108 253t277 96q36 0 71.5 -5t69 -13.5t36.5 -8.5q15 -102 20 -150l-29 -8q-20 79 -66.5 114t-128.5 35q-119 0 -187.5 -86t-68.5 -207
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<table>Raman spectrum of silicon film after 30-minute annealing
at a temperature of 473 K.</table>

Journal of Nanomaterials

fig4

Figure 4

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Journal of Nanomaterials

Field Effect on Crystal Phase of Silicon in Si// Structure

Figure 4