Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 10
Local STM images show the different
appearance of Ge-deposited Si(111)-7 7 surface with
filled-state images (−2.5 V) in (a) and (c) and empty-state image (+2.5 V) in (b) and (d). Single Ge cluster presents in (a) and (b) and double clusters in (c) and (d). The
centers Si adatoms, as indicated by the arrows, are invisible in (a) and (c) but
visible in (b) and (d). (e) Local density of states projected onto a center Si
adatom in a UHUC before and after Ge deposition. The Fermi level is at 0 eV. (f)
The corresponding relaxed minimum energy configuration (only the FHUC is
shown). The Si and Ge atoms are depicted by gray and dark spheres,
respectively. Spheres of decreasing size represent the Si atoms with increasing
distances from the surface. The dotted lines show weak bonds.
