Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 11
(a) STM image shows a typical Ge island on
the Si(111)-7 7 surface. The
substrate temperature was kept at 300 for Ge deposition. (b) The
schematic drawing of the Ge island on (7 7)
reconstruction. (c) and (d) are amplified images of the area in (a) depicted
with a dotted-line square. (7 7) and (5 5)
reconstructions coexist in the island. (e) and (f) are the close-up images of
area in (a) depicted with a solid-line square. These images, with the irregular
distribution of the brighter atoms, illustrate the intermixing between Ge and
Si atoms. Scanning parameters: (a) 120 nm 100 nm, 1.8 V,
0.15 nA; (c) 45 nm 45 nm, 1.2 V,
0.15 nA; (d) 45 nm 45 nm, −1.2 V,
0.15 nA; (e) 9 nm 9 nm, −1.0 V,
0.15 nA; (f) 9 nm 9 nm, −1.5 V,
0.15 nA.
