Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 2
Filled-state STM images of
Si(111)-7 7 surface
reveal 12 adatoms and 6 rest atoms per (7 7) unit cell.
(a) The image extends over an area of 30 nm 30 nm. The
amplificatory (7 7) unit cell
was indicated in the inset. (b) Amplified image with scanning area of 8 nm 8 nm. Both
images are recorded by sample bias voltage of −1.5 V and tunneling current of
0.3 nA. (c) The line profile taken along the line in (b).
Labels “1,” “2,” and “3” denote the corner adatom,
the rest atom, the center adatom in the FHUC, and labels “4”, “5”, and “6” denote the center adatom, the rest atom, the corner adatom in the UHUC, respectively.
