Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 3
STM images of Si(111)-7 7 surface with
different sample bias voltages: (a) −0.5, (b) −0.6, (c) −0.7, (d) −0.8, (e)
−0.9, (f) −1.0 V, respectively. The rest atoms appear when the sample
voltages are less than −0.7 V. All images are taken at tunneling current 0.4
nA in the scanning area of 5 nm 5 nm.
